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Related Experiment Video

Updated: May 28, 2026

Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating
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Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating

Published on: October 11, 2016

Dispersion Compensation and Multi-Beam Interference Correction Algorithm for Thickness Measurement of SiC Epitaxial

Lu Liu1,2, Weiwei Shi1,2, Shibo Xu3

  • 1School of Computer Science and Engineering, Xi'an University of Technology, Xi'an 710048, China.

Sensors (Basel, Switzerland)
|May 27, 2026
PubMed
Summary

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Huan jing ke xue= Huanjing kexue·2015

This study introduces a new framework to accurately measure silicon carbide (SiC) epitaxial layer thickness from infrared spectra. The method overcomes challenges like interference and noise, improving measurement precision.

Area of Science:

  • Materials Science
  • Optical Physics
  • Spectroscopy

Background:

  • Accurate thickness estimation of silicon carbide (SiC) epitaxial layers is crucial for semiconductor device performance.
  • Existing methods face challenges including refractive index dispersion, multi-beam interference, and spectral uncertainty.

Purpose of the Study:

  • To develop a physics-constrained inversion framework for accurate SiC epitaxial layer thickness estimation from infrared reflectance spectra.
  • To address and mitigate challenges like refractive index dispersion and multi-beam interference.

Main Methods:

  • Savitzky-Golay filtering for noise suppression and Gaussian fitting for interference extrema localization.
  • Sellmeier equation for refractive index dispersion and nonlinear least squares fitting for thickness and dispersion parameter extraction.
Keywords:
Monte Carlo analysisSiC epitaxial layerdispersion compensationinfrared reflectance spectramulti-beam interference correctionthickness estimation

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Last Updated: May 28, 2026

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10:39

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Published on: October 11, 2016

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07:10

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08:38

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  • Multi-feature confidence-based identification and adaptive filtering for multi-beam interference correction.
  • Main Results:

    • The proposed framework significantly reduces inter-angle deviation of thickness estimates from 1.14% to 0.08% after multi-beam correction.
    • Monte Carlo perturbation analysis confirms the robustness of the inversion results against noise and perturbations.
    • Demonstrated effectiveness on SiC datasets and supplementary silicon wafer spectra.

    Conclusions:

    • The developed physics-constrained inversion framework provides an effective and robust solution for SiC epitaxial layer thickness estimation.
    • The multi-beam interference correction strategy shows potential for broader applicability beyond SiC.
    • This work advances spectroscopic analysis techniques for semiconductor materials.