Related Experiment Video
Updated: May 28, 2026
10:39
Measurement of X-ray Beam Coherence along Multiple Directions Using 2-D Checkerboard Phase Grating
Published on: October 11, 2016
Dispersion Compensation and Multi-Beam Interference Correction Algorithm for Thickness Measurement of SiC Epitaxial
Lu Liu1,2, Weiwei Shi1,2, Shibo Xu3
1School of Computer Science and Engineering, Xi'an University of Technology, Xi'an 710048, China.
Sensors (Basel, Switzerland)
|May 27, 2026
Summary
This study introduces a new framework to accurately measure silicon carbide (SiC) epitaxial layer thickness from infrared spectra. The method overcomes challenges like interference and noise, improving measurement precision.
Area of Science:
- Materials Science
- Optical Physics
- Spectroscopy
Background:
- Accurate thickness estimation of silicon carbide (SiC) epitaxial layers is crucial for semiconductor device performance.
- Existing methods face challenges including refractive index dispersion, multi-beam interference, and spectral uncertainty.
Purpose of the Study:
- To develop a physics-constrained inversion framework for accurate SiC epitaxial layer thickness estimation from infrared reflectance spectra.
- To address and mitigate challenges like refractive index dispersion and multi-beam interference.
Main Methods:
- Savitzky-Golay filtering for noise suppression and Gaussian fitting for interference extrema localization.
- Sellmeier equation for refractive index dispersion and nonlinear least squares fitting for thickness and dispersion parameter extraction.
- Multi-feature confidence-based identification and adaptive filtering for multi-beam interference correction.
Main Results:
- The proposed framework significantly reduces inter-angle deviation of thickness estimates from 1.14% to 0.08% after multi-beam correction.
- Monte Carlo perturbation analysis confirms the robustness of the inversion results against noise and perturbations.
- Demonstrated effectiveness on SiC datasets and supplementary silicon wafer spectra.
Conclusions:
- The developed physics-constrained inversion framework provides an effective and robust solution for SiC epitaxial layer thickness estimation.
- The multi-beam interference correction strategy shows potential for broader applicability beyond SiC.
- This work advances spectroscopic analysis techniques for semiconductor materials.
