Polarization-Enabled Piezoelectric Tellurium-Selenium (Te_xSe_{1- x}) Thin Films for Memory Switching and Artificial...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional materials with piezoelectricity are crucial for multifunctional electronics.
• Piezoelectric and polarization effects enable electromechanical responses for memory and neuromorphic computing.

Purpose of the Study:

• To explore cryogenic physical vapor deposition (PVD)-grown Te$_{x}$Se$_{1-x}$ thin films.
• To examine the polarization-associated electromechanical characteristics of these films.
• To evaluate their potential for memory devices and neuromorphic applications.

Main Methods:

• Cryogenic physical vapor deposition (PVD) was used to grow Te$_{x}$Se$_{1-x}$ thin films.
• Electromechanical characteristics, including piezoelectric coefficient (d$_{33}$), were measured.
• Memory device performance (retention, switching cycles, HRS/LRS ratio) was tested.
• Synaptic behavior was demonstrated for neuromorphic applications.

Main Results:

• A 10 nm Te$_{0.9}$Se$_{0.1}$ film showed a switchable electromechanical response with d$_{33}$ of 33 pm/V.
• Enhanced polarization and domain response were observed with a Se ratio of 0.1, maintaining crystalline quality.
• Memory devices exhibited retention >2000 s, >1000 cycles, and HRS/LRS ratio >10$^{2}$.
• Synaptic behavior achieved 92% image recognition accuracy with low energy consumption.

Conclusions:

• Te$_{x}$Se$_{1-x}$ films are promising polarization-enabled piezoelectric semiconductors.
• These materials demonstrate potential for future low-power memory and computing applications.
• The study highlights the viability of Te$_{x}$Se$_{1-x}$ for multifunctional electronic devices.