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Ultra-High Dielectric Acceptor Enables 21% Efficiency and Thickness-Insensitive Organic Solar Cells
Youdi Zhang1, Hansheng Chen2, Ailing Yin3
1College of Chemistry, Key Laboratory of Advanced Green Functional Materials, Changchun Normal University, Changchun, China.
Advanced Materials (Deerfield Beach, Fla.)
|May 28, 2026
Summary
Researchers developed a new non-fullerene acceptor (NFA) with a higher dielectric constant (εr) for organic solar cells (OSCs). This dielectric engineering improved exciton dynamics and reduced recombination, boosting power conversion efficiency (PCE) and enabling thicker active layers.
Area of Science:
- Materials Science
- Organic Electronics
- Photovoltaics
Background:
- The dielectric constant (εr) of non-fullerene acceptors (NFAs) is critical for organic solar cell (OSC) performance, affecting exciton dissociation and charge recombination.
- Current NFAs have low εr (≈3-5), limiting device efficiency due to significant recombination losses.
Purpose of the Study:
- To design and synthesize a novel NFA with an enhanced dielectric constant.
- To investigate the impact of high-εr NFAs on the performance and charge dynamics in ternary OSCs.
- To explore dielectric engineering for improved thickness tolerance in OSC fabrication.
Main Methods:
- Synthesis of a new NFA, L8-BO-FO, by incorporating dimethyl ether units to increase εr.
- Fabrication of ternary OSCs using a blend of PM6:L8-BO with the high-εr L8-BO-FO guest acceptor.
- Characterization of the dielectric properties, exciton dynamics, and charge recombination in the active layer.
- Performance evaluation of the ternary OSCs, including power conversion efficiency (PCE) and thickness dependence.
Main Results:
- The new L8-BO-FO acceptor exhibited a significantly higher εr (7.41) compared to L8-BO (4.57).
- Incorporating L8-BO-FO into the PM6:L8-BO system increased the active layer's εr, accelerated exciton dynamics, and suppressed nonradiative recombination.
- Ternary OSCs achieved a boosted PCE of 21.0% and maintained 19.1% PCE even with a 300 nm active layer thickness.
Conclusions:
- Dielectric engineering using high-εr NFAs is a viable strategy to enhance OSC performance.
- The developed L8-BO-FO acceptor improves charge dynamics and enables excellent thickness tolerance in ternary OSCs.
- This approach offers insights for fabricating high-throughput and scalable OSCs.

