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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications

Ellapu Bhanu Prakash1, Ashok Ray2, Sushanta Bordoloi3,4

  • 1Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Chaltlang, Aizawl, Mizoram, 796012, India.

Scientific Reports
|May 29, 2026
PubMed
Abstract

Keywords:
Carrier mobilityGe-DG-TFETON-state currentStrain engineeringStrained channelTerahertz frequency

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