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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: Jun 1, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

PbSe/WTe2 Schottky Heterojunction for Low-Noise Mid-Infrared Detection.

Xianjing Zhang1,2, Mingshuo Zhen1,2, Xiangting Wang1,2

  • 1Department of Physics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China.

ACS Applied Materials & Interfaces
|May 30, 2026
PubMed
Summary
This summary is machine-generated.

We developed a novel PbSe/WTe2 heterostructure for room-temperature midwave infrared (MWIR) detection. This hybrid-dimensional device significantly reduces dark current and noise, enabling clear thermal imaging.

Keywords:
PbSe/WTe2 heterojunctionSchottky barriermidwave infrared detectionthermal imagingthermionic emission

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Related Experiment Videos

Last Updated: Jun 1, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Room-temperature midwave infrared (MWIR) detection is vital for gas sensing, thermal imaging, and optical communications.
  • Conventional narrow-band gap semiconductors exhibit high dark current and noise at room temperature, limiting their performance.
  • Existing materials like HgCdTe, InAsSb, and PbSe face challenges in achieving low-noise operation.

Purpose of the Study:

  • To introduce a novel hybrid-dimensional van der Waals heterostructure for low-noise room-temperature MWIR detection.
  • To investigate the carrier transport modulation and dark current suppression in PbSe/WTe2 heterostructures.
  • To demonstrate the potential of this new material for practical thermal imaging applications.

Main Methods:

  • Fabrication of a PbSe/WTe2 van der Waals heterostructure.
  • Characterization of the device's electrical transport properties, including dark current and noise current.
  • Measurement of spectral response, responsivity, and specific detectivity.
  • Demonstration of room-temperature thermal imaging using the heterostructure.

Main Results:

  • The PbSe/WTe2 heterostructure exhibits a significantly suppressed dark current density (as low as 6.9 × 10-5 A·cm-2), reduced by approximately one order of magnitude compared to pure PbSe.
  • Achieved low noise current density of 8.3 × 10-13 A Hz-1/2.
  • Demonstrated a broad spectral response from 808 to 4000 nm.
  • Obtained peak responsivity of 0.75 A/W and specific detectivity of 4.81 × 109 cm Hz1/2 W-1 at 2600 nm.
  • Successfully performed room-temperature imaging of blackbody and thermal targets.

Conclusions:

  • The hybrid-dimensional PbSe/WTe2 van der Waals heterostructure effectively suppresses dark current and noise for room-temperature MWIR detection.
  • The device performance is comparable to commercial MWIR detectors, offering a promising alternative.
  • This work presents an effective pathway towards developing high-performance, low-noise room-temperature MWIR detectors for various applications.