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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Bias-Tunable Two-Terminal Organic Photodetector for Intelligent Imaging.

Sangin Hahn1, Sanghoon Park1, Seunghyup Yoo1

  • 1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|June 1, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a simple organic reconfigurable photodetector for in-sensor computing. This device offers tunable responsivity, enabling efficient image processing and paving the way for intelligent image sensors.

Keywords:
in‐sensor computingorganic optoelectronicsreconfigurable photodetectorthin‐film photodetector

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Area of Science:

  • Organic electronics
  • Photodetector technology
  • Machine vision

Background:

  • In-sensor computing reduces computational load in machine vision by processing data directly on image sensors.
  • Reconfigurable photodetectors are key for in-sensor computing, enabling pixel-level signal modulation.
  • Current approaches using novel materials or complex transistor architectures face scalability and resolution limitations.

Purpose of the Study:

  • To develop a simple, scalable reconfigurable photodetector for in-sensor computing applications.
  • To demonstrate voltage-controlled, quasi-linear tuning of photodetector responsivity.
  • To showcase the device's potential for neural network emulation and image preprocessing.

Main Methods:

  • Fabrication of a vertically stacked, two-terminal organic photodetector using a donor/acceptor/donor tri-layer active material.
  • Characterization of the photodetector's electrical and optical properties, including dynamic range and responsivity tuning.
  • Implementation of a 4x4 photodetector array to perform photocurrent mapping and kernel operations for image processing emulation.

Main Results:

  • The device achieved an 80 dB linear dynamic range.
  • Quasi-linear responsivity tuning from -26 mA/W to 77 mA/W was achieved with bias variation from -1 V to 1 V.
  • The photodetector array successfully emulated image preprocessing filters by performing kernel operations.

Conclusions:

  • The simple, vertically stacked organic photodetector offers significant advantages over complex existing designs.
  • Voltage-controlled tunable responsivity enables direct implementation of neural network weights.
  • The straightforward fabrication process facilitates monolithic integration, advancing compact and efficient intelligent image sensors.