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Updated: Jun 3, 2026

Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
Published on: March 22, 2019
High-performance near-infrared light emission and detection enabled by interfacial doping in InSe/CrOCl van der Waals
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The demand for multifunctional optoelectronics is rapidly growing, driven by advances in information technology. The low-dimensional homojunctions exhibit ease in realizing direct current (DC) electro-driven light emission and effective self-powered photodetection capability induced by the built-in electric field. Here, a lateral InSe homojunction was fabricated by integrating two-dimensional CrOCl on InSe to induce interfacial localized p-type doping. The device exhibited DC electroluminescence (EL) with a maximum external quantum efficiency (EQE) value that could reach 60 times higher than its intrinsic counterpart. Benefiting from the built-in electric field in the homojunction region, the device possessed a high photoresponsivity of 96.84 mA/W, a fast temporal response of 6 (rise) and 62 (decay) μs, as well as a remarkable detectivity (D*) of 1.028 × 1010 Jones of 450 nm. This work manifests a novel approach to fabricating a lateral homojunction and reveals its potential application in a next-generation optoelectronic interconnect system.
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