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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

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Baiqing Lv^1,2, Yifan Su², Alfred Zong^2,3,4

¹Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.

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|June 2, 2026

Summary

Researchers discovered room-temperature, nonvolatile metastable states in EuTe4, ideal for multi-bit memory. These charge density wave (CDW) states are electrically driven and stable, advancing memory technology.

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Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Charge density waves (CDWs) enable metastable states but typically require low temperatures.
Practical applications are limited by the low-temperature stabilization of most metastable CDW states.

Purpose of the Study:

To report the observation of electrically driven, room-temperature, nonvolatile metastable states in EuTe4.
To explore the potential of EuTe4 for high-temperature, multi-bit memory applications.

Main Methods:

Systematic transport measurements (resistivity plateaus, electric-field sensitivity).
Photoemission spectroscopy, diffraction, and in-situ transport measurements.
Investigation of metastable states within a giant hysteresis loop.

Main Results:

Observation of discrete resistivity plateaus and strong electric-field sensitivity in bulk EuTe4.
Induction of numerous metastable states across a wide temperature range.
Characterization of metastable states by suppressed CDW amplitude and reduced correlation length.

Conclusions:

EuTe4 exhibits room-temperature, nonvolatile metastable states driven by electric fields.
These states arise from electric-field-induced switching of out-of-plane CDW phases in the moiré superstructure.
EuTe4 is a promising material for developing high-temperature, multi-bit memory devices.