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Updated: Jun 4, 2026
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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Room-temperature multistage metastability in a moiré superstructure.
Baiqing Lv1,2, Yifan Su2, Alfred Zong2,3,4
1Tsung-Dao Lee Institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
Nature Communications
|June 2, 2026
Summary
Researchers discovered room-temperature, nonvolatile metastable states in EuTe4, ideal for multi-bit memory. These charge density wave (CDW) states are electrically driven and stable, advancing memory technology.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Charge density waves (CDWs) enable metastable states but typically require low temperatures.
- Practical applications are limited by the low-temperature stabilization of most metastable CDW states.
Purpose of the Study:
- To report the observation of electrically driven, room-temperature, nonvolatile metastable states in EuTe4.
- To explore the potential of EuTe4 for high-temperature, multi-bit memory applications.
Main Methods:
- Systematic transport measurements (resistivity plateaus, electric-field sensitivity).
- Photoemission spectroscopy, diffraction, and in-situ transport measurements.
- Investigation of metastable states within a giant hysteresis loop.
Main Results:
- Observation of discrete resistivity plateaus and strong electric-field sensitivity in bulk EuTe4.
- Induction of numerous metastable states across a wide temperature range.
- Characterization of metastable states by suppressed CDW amplitude and reduced correlation length.
Conclusions:
- EuTe4 exhibits room-temperature, nonvolatile metastable states driven by electric fields.
- These states arise from electric-field-induced switching of out-of-plane CDW phases in the moiré superstructure.
- EuTe4 is a promising material for developing high-temperature, multi-bit memory devices.
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