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Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Characteristics of MOSFET01:17

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOSFET: Depletion Mode01:20

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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MOSFET01:16

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Biasing of Metal-Semiconductor Junctions01:27

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Updated: Jun 4, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

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Published on: December 5, 2015

Excitonic Shift Current in Monolayer MoS2.

Mingjun Chen1, Yi Wei Ho2,3, MingRui Lai4,5

  • 1Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.

ACS Nano
|June 3, 2026
PubMed
Summary
This summary is machine-generated.

We observed exciton-enhanced shift current in strained monolayer MoS2. This phenomenon, driven by higher-order excitons, offers new ways to control photocurrent in advanced electronic materials.

Keywords:
broken inversion symmetrybulk photovoltaic effectnonlinear photocurrentsecond-order conductivitytransition-metal dichalcogenidestwo-dimensional (2D) semiconductors

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Optoelectronics

Background:

  • Excitonic systems involve coupled electron-hole pairs, influencing electronic properties.
  • Shift current, a photocurrent in noncentrosymmetric materials, is theoretically linked to exciton effects.
  • Understanding exciton influence on shift current is crucial for novel optoelectronic devices.

Purpose of the Study:

  • To experimentally observe and characterize exciton-enhanced shift current.
  • To investigate the role of higher-order excitons in shift current generation.
  • To explore the tunability of shift current via electrostatic gating.

Main Methods:

  • Utilizing uniaxially strained monolayer MoS2 as the material system.
  • Measuring energy-dependent shift current conductivity using polarization-resolved photocurrent spectroscopy.
  • Employing multiterminal configurations for precise photocurrent measurements.
  • Applying electrostatic gating to modulate conductivity.

Main Results:

  • Direct observation of exciton-enhanced shift current in monolayer MoS2.
  • Identification of unique spectral features attributed to higher-order excitons.
  • Demonstration of a large shift vector for observed excitonic contributions.
  • Achieving a two-orders-of-magnitude modulation of shift current via gating.

Conclusions:

  • Exciton effects significantly enhance shift current magnitude in 2D materials.
  • Higher-order excitons play a key role in generating observable shift currents.
  • Electrostatic gating provides a powerful method to tune the interplay between free carriers and excitons, controlling shift current.