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Pieter Lagrain1, Nemanja Peric1, Lennaert Wouters1

  • 1IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.

Nanotechnology
|June 3, 2026
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Summary

Reverse tip sample (RTS) scanning probe microscopy (SPM) now enables quantitative carrier profiling in scanning spreading resistance microscopy (SSRM). New focused ion beam (FIB) preparation methods minimize damage, ensuring accurate electrical measurements for advanced material characterization.

Keywords:
FIB-damageRTS SPMRTS probe chipSSRMSSRM quantificationdiamond tipmulti-tip SPM

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electrical Engineering

Background:

  • Reverse tip sample (RTS) scanning probe microscopy (SPM) offers efficiency gains, particularly in high-force modes like scanning spreading resistance microscopy (SSRM).
  • Previous RTS SSRM advancements focused on probe fabrication and qualitative measurements, but quantitative carrier profiling remained elusive due to focused ion beam (FIB) induced sample damage.
  • Accurate carrier profiling is crucial for semiconductor device analysis and material science.

Purpose of the Study:

  • To develop and validate focused ion beam (FIB)-based sample preparation protocols for quantitative carrier profiling using reverse tip sample (RTS) scanning spreading resistance microscopy (SSRM).
  • To overcome the challenge of FIB damage in RTS sample preparation for reliable electrical measurements.
  • To enable accurate and efficient carrier concentration analysis in semiconductor materials.

Main Methods:

  • Two distinct FIB-based RTS sample preparation protocols were developed: sequential sample mounting and unified assembly bonding.
  • Co-mounting target and calibration samples on a single tipless cantilever to ensure identical ion beam exposure.
  • Quantitative validation using staircase calibration samples with known carrier concentrations and comparison with conventional SSRM.

Main Results:

  • The developed protocols successfully enabled quantitative carrier profiling using RTS SSRM, overcoming previous limitations caused by FIB damage.
  • Both sequential and unified assembly preparation methods yielded accurate SSRM quantification when validated with calibration samples.
  • Results from RTS SSRM were found to be equivalent to conventional SSRM, demonstrating its quantification reliability.

Conclusions:

  • This work establishes quantitative carrier profiling capabilities for RTS SSRM, addressing a critical gap in electrical SPM characterization.
  • The presented FIB preparation protocols offer a reliable method for accurate carrier concentration measurements in semiconductor research and development.
  • RTS SPM, particularly in its quantitative SSRM configuration, is positioned as a valuable tool for advanced electrical characterization of materials and devices.