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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

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Related Experiment Video

Updated: Jun 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 106 On/Off Ratio under ±1 V Gate-Voltage

Tianze Yu1, Ce Li1, Weili Zhen1

  • 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 102488, China.

Nano Letters
|June 3, 2026
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel ferroelectric-polarization-modulated floating-gate transistor (FMFGT) for low-voltage, high-performance memory. This device shows excellent on/off ratios and synaptic plasticity, advancing edge computing and AI applications.

Keywords:
ferroelectric polarizationfloating-gate memoryoptoelectronic synapsesvan der Waals heterostructure

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Last Updated: Jun 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Two-dimensional (2D) materials enable advanced floating-gate transistors with superior memory characteristics.
  • Existing devices often require high operating voltages and lack multifunctionality.

Purpose of the Study:

  • To propose and investigate a ferroelectric-polarization-modulated floating-gate transistor (FMFGT) for improved memory performance.
  • To explore low-voltage operation and multifunctional capabilities in 2D material-based transistors.

Main Methods:

  • Fabrication of a van der Waals heterostructure using CIPS/MLG/hBN/MoS2.
  • Characterization of device performance, including on/off ratio, dynamic response, and synaptic plasticity.

Main Results:

  • The FMFGT achieved a high on/off ratio (>10^6) at a low sweep voltage of 1 V.
  • Demonstrated robust dynamic response to ultrafast pulses (~20 ns) with an on/off ratio exceeding 10^9.
  • Exhibited controllable synaptic plasticity, enabling integration of optoelectronic logic gates.

Conclusions:

  • Ferroelectric polarization effectively reduces the tunneling barrier in floating-gate devices.
  • The FMFGT offers a promising solution for low-voltage, multifunctional memories for edge computing and AI.
  • This work provides new insights into ferroelectric polarization's role in advanced electronic devices.