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Updated: Jun 4, 2026

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

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Published on: April 8, 2018

Ferroelectric-Polarization-Modulated 2D Floating-Gate Memory Enabling a 106 On/Off Ratio under ±1 V Gate-Voltage

Tianze Yu1, Ce Li1, Weili Zhen1

  • 1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 102488, China.

Nano Letters
|June 3, 2026
PubMed
Abstract

Keywords:
ferroelectric polarizationfloating-gate memoryoptoelectronic synapsesvan der Waals heterostructure

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