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Symmetry Classification of Altermagnetism and Emergence of Type-IV Magnetism in Two Dimensions
Mu Tian1,2, Chaoxi Cui1,2, Zeying Zhang3
1Beijing Institute of Technology, Key Lab of advanced optoelectronic quantum architecture and measurement (MOE), Beijing Key Laboratory of Quantum Matter State Control and Ultra-Precision Measurement Technology, and School of Physics, Beijing 100081, China.
Abstract:
Two-dimensional (2D) magnetism, particularly 2D altermagnetism (AM), has attracted considerable interest due to its exceptional physical properties and broad application potential. However, the classification of AM undergoes a fundamental paradigm shift when transitioning from three-dimensional (3D) to 2D symmetry-enforced fully compensated collinear magnetism-a shift that has remained largely overlooked. Here, by extending unconventional magnetism to 2D collinear systems, we identify the symmetry conditions and electronic band characteristics of a distinct magnetic phase: type-IV magnetism. This new class lies beyond the established descriptions of ferromagnetism, conventional antiferromagnetism, and AM. Type-IV magnetism supports the successive emergence of both nonrelativistic spin-degenerate and relativistic spin-splitting phenomena, belonging strictly to neither conventional antiferromagnetism nor standard AM. We further establish a universal symmetry classification framework for 2D type-IV magnets via a mapping from the collinear spin layer group to the magnetic layer group. Monolayer MgCr_{2}O_{4} and monolayer BaMn_{2}Ch_{3} (Ch=Se, Te) are showcased as representative materials, exhibiting gate-tunable reversible spin textures and the quantum electric Hall effect, respectively. Our Letter underscores the rich functional prospects of type-IV magnets, offering a new route toward spin manipulation and anomalous transport that promises innovative designs for high-performance spintronic devices.
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