NbSe₂/Ta₂NiS₅ Interface-Engineered Schottky Heterojunctions for Near-Infrared Polarization-Sensitive Visual Synapses

Area of Science:

• Materials Science
• Neuromorphic Engineering
• Optoelectronics

Background:

• Demand for high-performance, low-power hardware for near-infrared (NIR) polarization-sensitive neuromorphic vision.
• Existing technologies face limitations in efficiency and tunability for applications like infrared detection and robot perception.

Purpose of the Study:

• Develop a 2D heterojunction-based visual synapse with efficient NIR polarization response and flexible regulation.
• Create a hardware platform for next-generation infrared polarization vision and adaptive robotic perception.

Main Methods:

• Fabrication of a heterojunction using NbSe2 and Ta2NiS5, forming an atomically sharp Schottky barrier.
• Characterization of polarization-dependent synaptic responses across the 1064-2200 nm NIR window.
• Demonstration of neuroplasticity emulation, including paired-pulse effects and Hebbian learning.

Main Results:

• The NbSe2/Ta2NiS5 heterojunction exhibits superior photoelectric response due to efficient charge separation and transport.
• Stable, polarization-dependent synaptic responses were achieved, precisely modulated by optical power, pulse duration, and bias voltage.
• An outstanding optical anisotropy ratio of 16.3 at 1550 nm was recorded.

Conclusions:

• The developed heterojunction provides a promising hardware platform for advanced NIR polarization vision and robotic perception.
• The tunable synaptic plasticity and efficient polarization response offer significant theoretical and practical value.
• This work paves the way for next-generation adaptive and intelligent optoelectronic systems.