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Three-Dimensional Pseudo-Ferroelectric Domain Walls in BiFeO3: Atomic-Scale Oxygen Octahedral Rotation and Polar
Xiali Liang1, Jiyang Xie1, Yu Tan1,2
1Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
Abstract:
The emergence of multiferroic order in perovskite thin films is governed by symmetry-broken coupling between polar domains and magnetic order parameters; however, currently prevailing theoretical frameworks, due to a constraint of reduced-dimensional approximations, fail to capture the inherent three-dimensional (3D) complexity of domain-mediated cross-correlations. Here, performing atomic-resolution HAADF/iDPC-STEM on BiFeO3 (BFO), we discover a "pseudo-ferroelectric domain wall" bridging (1)h/(0)h planes of BFO, in which two-dimensional (2D) projection indicates a domain-wall angle of 54.37°, but the actual 3D orientation remains 70.17°. When the (1)h plane is rotated 90° about the [2]h axis, it reveals the atomic arrangement of the (0)h plane, with polarization along [00]. These noncanonical 3D walls arise from oxygen-rearrangement-induced structural deviations and asymmetric Fe-O lattice coupling, which generate chiral polarization stabilized by a potent tripartite interaction between ferroelectric, shear, and spin degrees of freedom. This work provides a design principle for reconfigurable domain wall nanoelectronics.
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