Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Ginsenosides mitigate multi-organ aging: mechanistic insights from a preclinical systematic review and meta-analysis.

Critical reviews in food science and nutrition·2026
Same author

Correction: Mirikizumab as Induction and Maintenance Therapy in Chinese Patients with Ulcerative Colitis: A Subpopulation Analysis of the Randomized, Global Phase 3 LUCENT-1 and LUCENT-2 Trials.

BioDrugs : clinical immunotherapeutics, biopharmaceuticals and gene therapy·2026
Same author

Neuromorphic In-Memory Computing for Marine Visual-Auditory Perception.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Targeted Metabolite and Gene Expression Analysis of Anthocyanin and Kaempferol Glycoside Accumulation in Peach Accessions with Contrasting Flesh and Skin Pigmentation.

Foods (Basel, Switzerland)·2026
Same author

Design, Synthesis, and Biological Evaluation of a MyD88-Targeted Molecular Glue d21 for the Treatment of Acute Lung Injury.

Journal of medicinal chemistry·2026
Same author

Gate-Tunable GeSe/MoSe<sub>2</sub> Heterojunctions for In-Sensor Image Processing.

The journal of physical chemistry letters·2026
Same journal

A pH-Tolerant Nickel-Vanadium Phosphonate Framework for Stable Aqueous Supercapacitor Cycling.

ACS nano·2026
Same journal

Reconfigurable Photoelectric Coaxial Fiber-Based Memristors for Neuromorphic Computing.

ACS nano·2026
Same journal

Multidimensional Emission Control of CsPbI<sub>3</sub> Quantum Dots Using Plasmonic Quasi-Bound States in the Continuum.

ACS nano·2026
Same journal

Reconfigurable 2D Floating-Gate Field-Effect Transistors with Graphene-Induced Interfacial Polarization for Unified Memory-Logic Integration.

ACS nano·2026
Same journal

Bioinstructive Hybrid Scaffold Integrating Phosphoinositide 3-Kinase-Akt and Complementary Survival Pathways for Kidney Regeneration.

ACS nano·2026
Same journal

Robust Quantum Cutting via Halide-Bearing Ligand Passivation and Gradient Halide Reconstruction for Ultrabroadband Ultraviolet-to-Near-Infrared Photodetection and Imaging.

ACS nano·2026
See all related articles

Related Experiment Video

Updated: Jun 11, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Ferroelectric Gate-All-Around Transistors for 3D-Integrated Electronics and Neuromorphic Vision.

Wenjie Chen1, Dan Tang1, Chengming Luo2

  • 1Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, P. R. China.

ACS Nano
|June 10, 2026
PubMed
Summary
This summary is machine-generated.

We developed a novel ferroelectric gate-all-around (Fe-GAA) transistor for energy-efficient edge computing. This all-two-dimensional device offers superior performance and reduced footprint for artificial intelligence and Internet of Things applications.

Keywords:
3Dedge computingferroelectric gate-all-aroundfield-effect transistorsintegrated electronicsspiking neurons

More Related Videos

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

Related Experiment Videos

Last Updated: Jun 11, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors
08:26

Spray-Coated Melanin/PEDOT:PSS Films for Sustainable Organic Electrochemical Transistors

Published on: October 28, 2025

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Computer Science

Background:

  • Edge computing requires high-performance, low-power, and compact electronics for AI and IoT.
  • Traditional CMOS devices face limitations in achieving these demands simultaneously.
  • Developing novel architectures is crucial for next-generation edge intelligence processors.

Purpose of the Study:

  • To propose and demonstrate an all-two-dimensional low-power transistor with a ferroelectric gate-all-around (Fe-GAA) architecture.
  • To enable energy-efficient 3D-integrated electronics and neuromorphic edge computing.
  • To overcome the Boltzmann limit in traditional CMOS devices.

Main Methods:

  • Fabrication of Fe-GAA transistors using a ferroelectric gate material (CuInP2S6).
  • Characterization of device performance, including subthreshold swing, on/off ratio, and mobility.
  • Demonstration of binary logic operations and artificial neuron emulation (leaky integrate-and-fire) on a unified hardware platform.
  • Implementation of a spiking neural network (SNN) for gesture recognition.

Main Results:

  • Fe-GAA transistors achieved sub-60 mV dec⁻¹ switching (down to 25.3 mV dec⁻¹), a high on/off ratio (10⁸), and high mobility (310 cm² V⁻¹ s⁻¹).
  • Monolithic 3D-integrated logic circuits reduced footprint by 50% compared to planar CMOS.
  • Artificial neurons emulated LIF behavior without extra components, significantly reducing energy consumption and hardware footprint.
  • The SNN achieved 92.71% accuracy for gesture recognition on the DVS128Gesture dataset.

Conclusions:

  • The Fe-GAA architecture offers a paradigm for multifunctional edge intelligence processors.
  • This technology transcends traditional power-area trade-offs, enabling compact and energy-efficient edge computing.
  • The study paves the way for advanced neuromorphic computing and 3D-integrated electronics.