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Published on: September 8, 2017
Hydrogen bond engineering for defect passivation and performance enhancement in the one-dimensional copper-based
Jiansen Wen1, Sencan Chen2, Linqin Jiang3
1Materials Genome Institute, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China; Key Laboratory of Green Perovskites Application of Fujian Province Universities, Fujian Jiangxia University, Fuzhou 350108, China.
None:
The mechanochemical ball-milling process for one-dimensional copper-based perovskite-like halide Cs5Cu3Cl6I2 is recognized as a crucial pathway for scalable and sustainable production. However, crystal lattice defects are often introduced during synthesis, which promote non-radiative recombination and lead to performance degradation. Herein, a hydrogen-bond engineering strategy through NH4+ lattice doping was implemented to enhance the optoelectronic performance and stability of Cs5Cu3Cl6I2. Notably, the NH⋯Cl hydrogen bonds were successfully visualized for the first time in copper-based perovskite-like halides through independent gradient model and electron localization function analyses. Furthermore, the passivation model built upon density functional theory calculations and device simulations, confirmed the effective passivation of Cl vacancies and I-Cl anti-site defects by these hydrogen bonds, along with suppressed halide ion migration, resulting in a significant suppression of non-radiative recombination. Consequently, the photoluminescence quantum yield was boosted from 46.27% to 72.40%, along with a 21.42% prolongation of fluorescence lifetime and remarkable enhancement in blue UV-pumped phosphor-converted light-emitting diode luminous efficiency. This mechanistic framework is expected to provide valuable guidance for the development of high-performance copper-based perovskites.
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