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Related Experiment Video

Updated: Jun 12, 2026

Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices
06:21

Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices

Published on: January 25, 2021

Three-dimensional absorber correction for EUV mask defect compensation.

Hanzhi Zhang, Sikun Li, Xiaowei Song

    Optics Express
    |June 11, 2026
    PubMed
    Summary
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    This study introduces a novel 3D absorber correction method to fix extreme ultraviolet multilayer defects. The technique significantly enhances image quality without altering multilayer structures or adding materials.

    Area of Science:

    • Optics and Photonics
    • Materials Science
    • Semiconductor Manufacturing

    Background:

    • Extreme ultraviolet (EUV) multilayer defects cause amplitude and phase effects, degrading imaging quality.
    • Current compensation methods have limitations, including structural alterations, additional materials, or pattern pitch constraints.

    Purpose of the Study:

    • To propose a defect compensation method for EUV multilayer defects that overcomes existing limitations.
    • To improve defocused imaging performance in EUV lithography.

    Main Methods:

    • A novel defect compensation method based on three-dimensional (3D) absorber correction.
    • Exploration of the trade-off between 3D and two-dimensional (2D) corrections.
    • Implementation of a multi-channel perception strategy to enhance imaging.

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    Last Updated: Jun 12, 2026

    Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices
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    Published on: January 25, 2021

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    Main Results:

    • The proposed 3D absorber correction method effectively compensates for various defect types, sizes, and locations.
    • Substantially improved defocused imaging performance compared to existing techniques.
    • Successful application under 0.33 NA and 0.55 NA conditions for diverse mask patterns.

    Conclusions:

    • The 3D absorber correction method offers a versatile and effective solution for EUV multilayer defect compensation.
    • This approach avoids limitations of prior methods, enabling enhanced imaging performance.
    • The technique is applicable across various lithographic conditions and mask designs.