Temperature-dependent characteristics of GaN-based laser diodes

Area of Science:

• Optoelectronics
• Materials Science
• Semiconductor Physics

Background:

• Gallium nitride (GaN)-based laser diodes (LDs) are crucial for visible light communication and quantum systems.
• Demand for visible LDs operating beyond room temperature is increasing.
• Limited research exists on the high-temperature performance of visible LDs.

Purpose of the Study:

• To experimentally investigate the temperature dependence of blue GaN LDs.
• To analyze the impact of structural design on thermal stability.
• To provide design guidelines for high-temperature GaN LDs.

Main Methods:

• Comprehensive experimental investigation of blue GaN LDs.
• Testing over a wide temperature range (283 K to 363 K).
• Studying the effect of quantum-well number (SQW, DQW, TQW) and cavity length (300 µm, 700 µm).

Main Results:

• Triple quantum wells (TQWs) demonstrated superior temperature stability compared to double (DQWs) and single (SQW) quantum wells.
• Longer cavity (700 µm) LDs exhibited enhanced heat dissipation over shorter (300 µm) ones.
• Electro-optical and dynamic characteristics were analyzed across temperatures.

Conclusions:

• Structural design significantly impacts the thermal stability of blue GaN LDs.
• TQWs and longer cavities are key for high-temperature performance.
• Findings guide the development of robust LDs for demanding environments.