1390 nm GaAs-based dilute nitride VCSELs on 150 mm wafers for scalable production

We report the development of dilute nitride vertical-cavity surface-emitting lasers emitting near 1390 nm, grown by molecular beam epitaxy on 150 mm GaAs substrates. DN alloys provide a promising alternative to InP-based materials for long-wavelength laser applications above 1300 nm. Devices with oxide apertures ranging from 3 to 7 μm were characterised. Photovoltage spectroscopy was employed to investigate the spectral mismatch between the cavity resonance and the quantum well absorption edge. Near-field beam profiles revealed evidence of thermal lensing, highlighting the impact of self-heating on lasing characteristics.