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Updated: Jun 12, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

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Published on: October 13, 2017

Compact high-Q multimode InGaAsP/InP microring resonators enabled by mode-selective excitation.

Guannan Lv, Tianyu Sun, Xiuhua Fu

|June 11, 2026

Summary

This summary is machine-generated.

Researchers developed compact, high-quality factor InGaAsP/InP microring resonators (MRRs). This breakthrough suppresses scattering and bending losses, enabling advanced photonic integration for nonlinear applications.

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Last Updated: Jun 12, 2026

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Published on: October 13, 2017

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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Area of Science:

Photonics and Optical Engineering
Semiconductor Materials Science
Integrated Optics

Background:

Indium Gallium Arsenide Phosphide (InGaAsP) on Indium Phosphide (InP) is a key platform for photonic integration due to its nonlinear optical properties and active device compatibility.
Small-radius InGaAsP microring resonators (MRRs) suffer from high scattering and bending losses, limiting their quality factor (Q).

Purpose of the Study:

To demonstrate compact, high-Q InGaAsP/InP microring resonators (MRRs) suitable for advanced photonic applications.
To overcome the limitations of scattering and bending losses in small-radius resonators.

Main Methods:

Utilized mode-selective excitation in multimode resonators.
Increased waveguide width to suppress sidewall scattering and bending losses.
Employed phase-matched coupling conditions to mitigate intermodal coupling and ensure selective excitation of the fundamental transverse-electric mode.

Main Results:

Achieved an intrinsic quality factor (Q_int) of 1.17 × 10^6 in an 80-µm-radius resonator.
Measured a propagation loss of approximately 0.6 dB/cm at telecom wavelengths.
Reported the highest intrinsic Q factor for InGaAsP/InP MRRs with sub-100-µm radii to date.

Conclusions:

Demonstrated a practical method for fabricating compact, high-Q InGaAsP/InP microring resonators.
The developed resonators are suitable for nonlinear photonic applications.
This advancement paves the way for enhanced III-V semiconductor-based photonic devices.