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High-performance tunnel-junction micro-LEDs grown by MOCVD without post-growth annealing
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High-performance tunnel junction (TJ) micro-light-emitting diode (micro LED) devices without post-growth annealing were grown by metalorganic chemical vapor deposition (MOCVD). During the initial growth of the top n--GaN layer, the device forms island-like structures, allowing hydrogen to escape through the gaps between islands, thereby achieving activation of the p-GaN layer. The device achieves an operating voltage of 2.99 V at 20 A/cm2, a peak wall-plug efficiency (WPE) of 45.23%, and exhibits more uniform luminescence intensity in the electroluminescence (EL) image. This work establishes a pathway for enhancing the performance of an MOCVD-grown TJ.
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