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Updated: Jun 12, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
MOCVD-grown n-InAs/GaAs heterostructures for tunable mid-IR magneto-optical nonreciprocity
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Magneto-optical (MO) nonreciprocal devices are essential for integrated photonics and thermal-radiation control, yet a scalable III-V semiconductor platform with strong tunability remains lacking. Here, we report high-quality Si-doped InAs films grown on GaAs (100) via a tailored three-step metal-organic chemical vapor deposition (MOCVD) process. Systematic optical and electrical measurements reveal the quantitative link between carrier modulation and nonreciprocal optical response. Electron concentrations (N) tunable from 1018 to 4.7 × 1019 cm-3 with a mobility (μ) of 1500 cm2·V-1·s-1 at the highest doping level are achieved. We designed MO nonreciprocal structures that exploit epsilon-near-zero (ENZ) engineering and doping-gradient effects. Simulations based on experimentally extracted parameters predict broadband, direction-dependent absorption and emission in the 10-13 µm band, with nonreciprocity exceeding 60%. These findings establish MOCVD-grown InAs/GaAs as a practical and tunable III-V semiconductor platform for integrated nonreciprocal photonics and mid-infrared energy-management devices.
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