Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Memory-Assisted Nonlocal Interferometer toward Long-Baseline Telescopes.

Physical review letters·2026
Same author

10<sup>-21</sup>-Level optical frequency dissemination over 2067 km of noise-loaded field-deployed fiber network.

Light, science & applications·2026
Same author

Experimental Quantum Error Correction below the Surface Code Threshold via All-Microwave Leakage Suppression.

Physical review letters·2026
Same author

Zero-Dead-Time Strontium Lattice Clock with a Stability at 10^{-19} Level.

Physical review letters·2026
Same author

Programmable higher-order nonequilibrium topological phases on a superconducting quantum processor.

Science (New York, N.Y.)·2025
Same author

Absolute ranging over 113 km with nanometer precision.

National science review·2025

Related Experiment Video

Updated: Jun 12, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Low-voltage silicon photonics modulator with CMOS-compatible driving for compact quantum key distribution

Zhao-Yuan Chen, Yu-Ang Wang, Jiang-Kai Yu

    Optics Express
    |June 11, 2026
    PubMed
    Summary

    This study introduces a carrier injection modulator (CIM) for quantum key distribution (QKD), achieving lower operating voltages than traditional carrier depletion modulators (CDM). The optimized CIM demonstrates high modulation efficiency for energy-efficient QKD transmitters.

    More Related Videos

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Related Experiment Videos

    Last Updated: Jun 12, 2026

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Area of Science:

    • Quantum Information Science
    • Integrated Photonics
    • Semiconductor Device Engineering

    Background:

    • Quantum key distribution (QKD) systems often utilize silicon photonic chips.
    • Carrier depletion modulators (CDMs) are common in QKD but require high driving voltages (>5 V) due to low modulation efficiency.
    • High operating voltages limit the compactness and energy efficiency of QKD transmitters.

    Purpose of the Study:

    • To investigate the use of a carrier injection modulator (CIM) for quantum bit encoding in QKD.
    • To demonstrate a CIM with significantly lower operating voltages compared to CDMs.
    • To confirm the CIM's suitability for compact and energy-efficient QKD transmitters.

    Main Methods:

    • Structural optimization of a silicon photonic carrier injection modulator (CIM).
    • Characterization of the CIM's half-wave voltage and modulation depth.
    • Demonstration of intensity and polarization state modulation for quantum bit encoding.

    Main Results:

    • The optimized CIM achieved a low half-wave voltage of 1.1 V (DC) and 1.28 V (at 100 MHz).
    • A high modulation depth exceeding 24 dB was recorded under both DC and 100 MHz conditions.
    • Successful demonstrations of intensity and polarization state modulation were performed.

    Conclusions:

    • Carrier injection modulators (CIMs) offer superior modulation efficiency for QKD.
    • Optimized CIMs enable significantly lower operating voltages, compatible with CMOS technology.
    • CIMs are a promising technology for developing compact and energy-efficient QKD transmitters.