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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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High Throughput X-Ray Characterization of Defects in Wide-Bandgap Semiconductors.

Tia Gray1, Elias J Garratt2, Xiang Zhang1

  • 1Department of Materials Science and Nanoengineering, Rice University, Houston, Texas, USA.

Advanced Materials (Deerfield Beach, Fla.)
|June 11, 2026
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Summary

Accurately quantifying defects in wide-bandgap materials like diamond is crucial for advanced technologies. This study introduces a scalable X-ray diffraction method, validated by other techniques, to precisely measure dislocation densities.

Keywords:
X‐ray diffractiondefect characterizationdiamonddislocation densitywide‐bandgap semiconductors

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Crystallography

Background:

  • Wide-bandgap materials are essential for high-power, RF, and quantum technologies.
  • Crystalline defects, particularly dislocations, limit the performance of these materials.
  • Accurate and scalable defect density quantification in materials like single-crystal diamond is a significant challenge.

Purpose of the Study:

  • To develop and validate an integrated methodology for characterizing dislocation densities in diamond.
  • To establish a robust, scalable, and versatile platform for high-throughput defect analysis.
  • To demonstrate the adaptability of the methodology to other wide-bandgap semiconductors like GaN.

Main Methods:

  • Utilized high-resolution X-ray diffraction (HRXRD) for defect characterization.
  • Developed a custom Python-based tool to process X-ray rocking curves and reciprocal space maps.
  • Validated HRXRD results using Raman spectroscopy, hydrogen etch-pit analysis, and Hall effect measurements.

Main Results:

  • Applied the methodology to four commercial diamond grades with defect densities ranging from ~10^5 to 10^8 cm^-2.
  • Observed consistent trends across all characterization techniques, confirming the reliability of the approach.
  • Electronic-grade diamond demonstrated the highest crystalline quality with the lowest defect density.

Conclusions:

  • The integrated methodology provides a robust and scalable solution for quantifying dislocation densities in diamond.
  • The developed Python tool is adaptable for defect analysis in other wide-bandgap materials, including GaN.
  • This work enables high-throughput defect characterization, crucial for advancing semiconductor technologies.