Two-terminal ferroelectric memristors: material innovation, mechanistic breakthroughs, new opportunities for...

The accelerating demand for intelligent and energy-efficient computing is driving the search for alternatives to the traditional von Neumann architecture, which is increasingly constrained by the physical separation of memory and processing units. Among emerging solutions, ferroelectric memristors have attracted considerable attention owing to their continuously tunable non-volatile data storage enabled by polarization-strength modulation and their electrically adjustable resistance governed by ferroelectric polarization switching. Furthermore, the long-term polarization retention of ferroelectric materials, the high endurance of the devices, and the hysteretic, accumulative, and plastic nature of polarization switching make them ideal candidates for implementing memory and neuromorphic computing paradigms. This review examines the latest advances in ferroelectric memristor research, including device physics, material systems, and ferroelectric modulation. We also highlight the neuromorphic applications of such devices in synaptic simulation and multimodal integrated perception, as well as their implementation in large-scale integrated arrays. The outlook discusses potential future directions of ferroelectric memristors for the development of high-performance and low-power intelligent systems from the perspectives of materials, devices, algorithms, and architectures. This work contributes to advancing the understanding of cutting-edge developments in ferroelectric memristors and provides a theoretical foundation and innovative insights for breakthroughs in next-generation low-power intelligent computing architectures.