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Related Concept Videos

Three-Dimensional Analysis of Strain01:29

Three-Dimensional Analysis of Strain

Three-dimensional strain analysis is crucial for understanding how materials deform under stress, particularly in elastic, homogeneous materials. This method employs principal stress axes to simplify complex stress states into more understandable forms. Subjected to stress, a small cubic element within a material either expands or contracts along these axes, transforming into a rectangular parallelepiped. This transformation effectively illustrates the material's deformation. The principal...
Transformation of Plane Strain01:12

Transformation of Plane Strain

When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
Measurements of Strain01:27

Measurements of Strain

Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...
Elastic Strain Energy for Shearing Stresses01:20

Elastic Strain Energy for Shearing Stresses

As discussed in previous lessons, strain energy in a material is the energy stored when it is elastically deformed, a concept crucial in materials science and mechanical engineering. This energy results from the internal work done against the cohesive forces within the material. When a material undergoes shearing stress and corresponding shearing strain, the strain energy density, which is the energy stored per unit volume, is calculated. Within the elastic limit, where the stress is...
Strain and Elastic Modulus01:15

Strain and Elastic Modulus

The quantity that describes the deformation of a body under stress is known as strain. Strain is given as a fractional change in either length, volume, or geometry under tensile, volume (also known as bulk), or shear stress, respectively, and is a dimensionless quantity. The strain experienced by a body under tensile or compressive stress is called tensile or compressive strain, respectively. In contrast, the strain experienced under bulk stress and shear stress is known as volume and shear...
Normal Strain under Axial Loading01:20

Normal Strain under Axial Loading

Normal strain under axial loading is an important concept in the field of mechanics of materials. Axial loading implies the application of a force along the axis of a material, like a column or bar. This force can either compress or stretch the material. In the context of axial loading, normal strain is the deformation experienced by the material in the direction of the loading force. It's calculated as the change in length divided by the original length of the material. This unitless ratio...

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Related Experiment Video

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Production of a Strain-Measuring Device with an Improved 3D Printer
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Production of a Strain-Measuring Device with an Improved 3D Printer

Published on: January 30, 2020

Atomically confined insertion for 2D strain and polarization engineered GaN electronics.

Yuanhong Shi1,2,3, Zilong Dong1,2,3, Jiangwen Wang1,2,3

  • 1Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China.

Nature Communications
|June 11, 2026
PubMed
Summary
This summary is machine-generated.

Atomically confined insertion enhances gallium nitride semiconductors by creating 2D magnesium layers. This boosts normally-off transistor threshold voltage to 4.3V, improving device performance and suppressing current collapse.

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Area of Science:

  • Semiconductor physics
  • Materials science
  • Advanced electronics

Background:

  • Gallium nitride (GaN) semiconductors are crucial for next-generation electronics.
  • Achieving robust normally-off devices is key to unlocking GaN potential.
  • P-GaN gate high-electron-mobility transistors (HEMTs) are dominant but limited by low magnesium acceptor activation efficiency, restricting threshold voltage.

Purpose of the Study:

  • To overcome the threshold voltage limitation in P-GaN HEMTs.
  • To enhance the activation efficiency of magnesium acceptors in GaN.
  • To improve the overall performance and stability of GaN-based power devices.

Main Methods:

  • Demonstration of atomically confined insertion technique.
  • Creation of self-terminating, two-dimensional magnesium layers within heterostructures.
  • Induction of localized strain and polarity inversion at the atomic scale.

Main Results:

  • Achieved a significant increase in effective hole concentration.
  • Boosted the threshold voltage of P-GaN HEMTs from 1.5V to 4.3V.
  • Mitigated transconductance and output current degradation, and substantially suppressed current collapse.

Conclusions:

  • Atomically confined insertion effectively overcomes magnesium acceptor activation limitations.
  • This technique enables significant performance enhancements in GaN HEMTs.
  • Atomic-scale field engineering offers a new pathway for semiconductor device optimization.