Related Experiment Video
Updated: Jun 13, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
A low-power buffer-assisted 14T ternary SRAM
Shams Ul Haq1, Erfan Abbasian2, Abdolreza Darabi3
1Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi, 110025, India.
Abstract:
Ternary static random-access memory (TSRAM) has emerged as a promising solution for enhancing energy efficiency and information density beyond binary limits, particularly in data-intensive and low-power applications. This paper presents a power-efficient single-supply 14-transistor CNTFET-based ternary SRAM cell that uses a buffer-based topology with a single-bitline read/write scheme. The proposed design eliminates the need for dual supply rails and redundant voltage-division paths, significantly reducing dynamic power and delay while maintaining robust stability. Extensive HSPICE simulations using the Stanford CNTFET compact model demonstrate superior performance compared to state-of-the-art TSRAM cells, achieving the lowest power-delay product of 5.37 aJ at 0.9 V, along with a competitive static noise margin under process variations. To evaluate practical effectiveness, the proposed TSRAM is integrated into a ternary medical image processing framework using hardware-based signal mapping and a weighted k-nearest neighbor classifier. Application-level results show a 26.65% reduction in average energy consumption, a peak signal-to-noise ratio of 41.06 dB, a mean structural similarity of 99.83%, and a prediction accuracy of 97.86%. A comprehensive figure of merit confirms a 61.58% improvement over existing designs, highlighting the proposed architecture as a strong candidate for energy-efficient ternary biomedical processing systems.
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Buffers
Diode: Reverse bias
Schottky Barrier Diode
Bipolar Junction Transistor
The structure...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

