Study of Single Crystal and X-Ray Detector Performance of Ti³⁺: β-Ga₂O₃

Gallium oxide (Ga₂O₃) is emerging as a promising material for X-ray detectors due to its high sensitivity, high melting point, and stable physicochemical properties. However, intrinsic background shallow donors in raw materials hinder the preparation of high-resistance intrinsic crystals, making doping essential to tailor electrical properties. This study grew Ti³⁺-doped β-Ga₂O₃ single crystals via the Edge-defined Film-fed Growth (EFG) method using Ti₂O₃ as a dopant, achieving high resistivity and a moderate reduction in bandgap. High-resolution X-ray diffraction (HRXRD) showed a rocking curve full width at half maximum (FWHM) of 96.50 arcsec. Compared with the unintentionally doped (UID) crystal, the bandgap exhibited a slight reduction, decreasing from 4.76 eV to 4.59 eV. In the infrared transmission spectra, the onset wavelength of the decrease in transmittance for the Ti³⁺: β-Ga₂O₃ crystal showed a distinct redshift relative to that of the UID crystal, indicating effective suppression of free electrons within the crystal. X-ray photoelectron spectroscopy (XPS) revealed that Ti³⁺ incorporation minimally affected the valence states of Ga and O or the Ga/O ratio, with no significant shift in valence band maximum (EVBM). A metal-semiconductor-metal (MSM) structured X-ray detector fabricated on polished Ti³⁺: β-Ga₂O₃ (100) substrate with Ti/Au electrodes exhibited a peak sensitivity of 943.16 μC/(Gy·cm²) at 40 V bias and 2.944 μGy/s dose rate, surpassing the upper sensitivity limit reported for semi-insulating doping bulk β-Ga₂O₃ detectors. The rise and fall times were 0.23 s and 0.30 s, respectively, with a minimum detectable limit (MDL) of 164.26 nGy/s, demonstrating its potential for high-performance X-ray detection applications.