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Updated: Jun 13, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS₂ Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Regulating Electrostatic Discharge via Quasi-gate Electrode for High-Performance Direct-current Triboelectric

Xiaochuan Li¹, Xuemei Zhang¹, Ren Dahu¹

¹Department of Applied Physics, Chongqing Key Laboratory of Materials Physics, College of Physics, Chongqing University, Chongqing, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)

|June 12, 2026

Summary

This study introduces a novel quasi-gate-electrode enhanced direct-current triboelectric nanogenerator (DC-TENG) that significantly improves mechanical energy harvesting. The new design suppresses discharge, boosting output charge and power density for efficient energy generation.

Keywords:

charge leakage direct‐current triboelectric nanogenerators discharge pathways electric field redistribution electrostatic breakdown quasi‐gate electrodes

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Area of Science:

Materials Science
Energy Harvesting
Nanotechnology

Background:

Direct-current triboelectric nanogenerators (DC-TENGs) show promise for mechanical energy harvesting.
Challenges include incomplete charge collection and parasitic discharge pathways.

Purpose of the Study:

To propose a quasi-gate-electrode enhanced DC-TENG (QGED-TENG) to overcome limitations in DC-TENG performance.
To enhance charge collection efficiency and suppress parasitic discharge.

Main Methods:

Inspired by depletion-mode field-effect transistors, a back-side quasi-gate-electrode (QGE) and porous PTFE film were employed.
Modulated electrostatic breakdown and charge leakage to suppress parasitic discharge.
Investigated direction-contingent enhancement and depletion modes without external bias.

Main Results:

The QGED-TENG demonstrated a 1.41-fold increase in output charge in enhancement mode compared to devices without a QGE.
A multi-unit architecture achieved a linear charge increase with the number of units.
An optimized rotational QGED-TENG reached an ultrahigh average power density of 25 W m⁻² Hz⁻¹ and charge density of 13.65 mC m⁻² at 60 rpm.

Conclusions:

The QGED-TENG effectively suppresses parasitic discharge and enhances output performance.
The design provides new physical insights and a general strategy for maximizing spatial charge utilization in DC-TENGs.
Achieved a new benchmark for porous triboelectric layers in electrostatic breakdown-based DC-TENGs.