Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Ferromagnetism01:31

Ferromagnetism

Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Interlayer Valley Coupling and Hybridized Excitons in Twisted van der Waals Bilayers With Broken Translational Symmetry.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Twist-Angle-Controlled Built-In Field Reversal Enables Programmable Self-Powered Photodetection in Low-Symmetry Heterostructures.

Nano letters·2026
Same author

Large Enhancement of Magnetocaloric and Barocaloric Effects by Hydrostatic Pressure in La(Fe<sub>0.92</sub>Co<sub>0.08</sub>)<sub>11.9</sub>Si<sub>1.1</sub> with a NaZn<sub>13</sub>-Type Structure.

Chemistry of materials : a publication of the American Chemical Society·2026
Same author

Symmetry-Breaking-Induced Polarization Sensitivity in PtS<sub>2</sub>/CrOCl van der Waals Heterostructures for High-Performance Photodetectors.

ACS applied materials & interfaces·2026
Same author

Dynamic Control of Heterointerface Coupling in Magnetic van der Waals Heterostructures via Pressure Engineering.

ACS nano·2026
Same author

Magnetic-Order-Mediated Second Harmonic Generation in a Room-Temperature van der Waals Ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub>.

Nano letters·2026
Same journal

Mechanism of Dipole Moment Effect on the Schottky Barrier at Janus MoSH/MoSiGeN<sub>4</sub> Metal-Semiconductor Interfaces.

The journal of physical chemistry letters·2026
Same journal

Quantum Trajectory Mean-Field Method Extended for Simulating Laser Field-Induced Nonadiabatic Dynamics.

The journal of physical chemistry letters·2026
Same journal

Self-Sustained Freeze-Sublime Oscillations at a Micrometer Liquid-Vacuum Interface.

The journal of physical chemistry letters·2026
Same journal

<i>Ab Initio</i> Simulation of Femtosecond Time-Resolved Multipulse Spectroscopies Applied to the Heptazine···H<sub>2</sub>O Complex.

The journal of physical chemistry letters·2026
Same journal

From Exciton to Tetraexciton: Final-State Doublets and 1P Addition Energies in a Weakly Confined Perovskite Quantum Dot.

The journal of physical chemistry letters·2026
Same journal

Photoinduced Structural Instability Toward the Superionic Phase Transition in Cu<sub>2</sub>S.

The journal of physical chemistry letters·2026
See all related articles
  1. Home
  2. Interfacial Magnetic Order Controls Valley Polarization In Ws2/fe3gate2 Heterostructures.
  1. Home
  2. Interfacial Magnetic Order Controls Valley Polarization In Ws2/fe3gate2 Heterostructures.

Related Experiment Video

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Interfacial Magnetic Order Controls Valley Polarization in WS2/Fe3GaTe2 Heterostructures.

Shaofei Li1, Xing Xie1,2, Junying Chen1,2

  • 1Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.

The Journal of Physical Chemistry Letters
|June 12, 2026

View abstract on PubMed

Summary
This summary is machine-generated.

Interfacial magnetic order in WS2/Fe3GaTe2 heterostructures controls valley exciton dynamics. Oxidation alters magnetic order, impacting magneto-valley coupling and Zeeman splitting.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Related Experiment Videos

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Quantum Optics

Background:

  • Van der Waals heterostructures combining 2D magnets and transition-metal dichalcogenides offer potential for spin and valley physics control.
  • The precise origin of magnetically induced valley polarization in these systems is not fully understood.

Purpose of the Study:

  • To investigate the role of interfacial magnetic order in governing valley exciton dynamics.
  • To differentiate intrinsic magnetic proximity effects from oxidation-induced interfacial reconstruction.
  • To elucidate the mechanisms behind magneto-valley coupling in WS2/Fe3GaTe2 heterostructures.

Main Methods:

  • Fabrication and characterization of bottom- and top-stacked WS2/Fe3GaTe2 heterostructures.
  • Polarization-resolved photoluminescence spectroscopy.
  • High-field magneto-optical measurements.
  • First-principles calculations.
  • Main Results:

    • The protected bottom-stacked interface exhibits preserved ferromagnetic order, leading to significant valley hysteresis and a large valley exciton Zeeman splitting (13.7 meV, ~59 T).
    • The exposed top-stacked interface shows suppressed splitting (1.26 meV) due to oxidation-induced antiferromagnetic order.
    • Oxidation weakens Fe-W orbital hybridization, diminishing the proximity exchange field.

    Conclusions:

    • Interfacial magnetic reconstruction, driven by oxidation, is the critical factor determining magneto-valley coupling.
    • Controlling interfacial order is essential for harnessing coupled spin and valley physics in 2D heterostructures.