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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Reconfigurable Organic Phototransistor Array by Scalable Photolithography for Near-Infrared Image Sensing and
1School of Materials Science and Engineering, Tongji University, Shanghai 201804, P. R. China.
Abstract:
Organic phototransistors (OPTs) have attracted considerable attention for constructing advanced artificial vision systems due to their mechanical flexibility, solution processability, and tunable optoelectronic functions. Nonetheless, fabricating large-scale OPT arrays that combine highly sensitive near-infrared (NIR) photodetection and retina-like dynamic photomemory functions remains a significant challenge. Herein, we demonstrate reconfigurable NIR OPTs based on a simple semiconductor heterojunction design, achieving a responsivity of up to 3.82 × 103 A W-1 and a detectivity of up to 7.90 × 1014 Jones. By changing the gate bias, the OPTs can be reversibly switched between a photodetection mode and a dynamic photomemory mode, offering adaptability for diverse application scenarios. Furthermore, we fabricate a high-density OPT array (6500 units cm-2) with excellent uniformity via modified organic semiconductor-compatible photolithography to address the solvent compatibility issue of organic semiconductors, demonstrating a scalable pathway toward future organic electronic applications. As a proof of concept, the array is applied in two distinct configurations: the photodetection mode enables precise NIR pattern imaging, while its photomemory mode is employed to construct an in-sensor reservoir computing system for efficient image recognition. This work provides a promising device platform for the development of high-performance, dual-mode NIR artificial vision systems with integrated sensing and processing capabilities.

