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Updated: Jun 14, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Layer-Dependent Phonon Polaritons in hBN Resolved by Photo-Induced Force Spectroscopy
Amin Hajarian1, Jiwoo Seo1, SungWoo Nam1,2
1Department of Mechanical and Aerospace Engineering, University of California, Irvine, California, USA.
Hexagonal boron nitride (hBN) layer number tunes phonon polariton resonance frequencies. Increasing layers blue-shift in-plane resonances and red-shift out-of-plane resonances, impacting nanophotonic applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanophotonics
Background:
- Hexagonal boron nitride (hBN) is a van der Waals material supporting confined phonon polaritons.
- Previous studies focused on phonon polariton wavelength and propagation, not resonance energy dependence on hBN layer number.
Purpose of the Study:
- To systematically investigate the layer-dependent phonon polariton resonance frequencies in hBN.
- To analyze the spectral behavior of phonon polaritons as a function of hBN thickness.
Main Methods:
- Photo-induced force microscopy (PiFM) was employed for spectroscopic analysis.
- hBN samples with layer numbers ranging from approximately 10 to 60 were probed.
Main Results:
- Observed opposing trends in resonance frequencies for in-plane and out-of-plane phonon polaritons.
- In-plane resonance blue-shifted, while out-of-plane resonance red-shifted with increasing hBN layer number.
- Out-of-plane band intensity increased, while in-plane resonance weakened and broadened with layer number.
Conclusions:
- Layer number is a critical tuning parameter for phonon polariton behavior in hBN.
- Findings provide insights into the optical response of hBN across different layer regimes.
- Results are significant for developing nanophotonic devices utilizing hBN.
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