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Related Concept Videos

IR Frequency Region: X–H Stretching01:24

IR Frequency Region: X–H Stretching

In IR spectroscopy, signals produced by the X−H bonds (such as C−H, O−H, or N−H) can be observed in the frequency range of  2700–4000 cm–1. The C−H stretching vibration forms sharp bands in the region 2850–3000 cm–1. The presence of the O−H stretching vibration leads to the forming of an absorption band in the frequency range 3650–3200 cm−1. At the same time, N−H stretching can be confirmed by absorption bands in the 3500–3100 cm−1 range. Even though both O−H and N−H bonds vibrate at a similar...
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Interference is a characteristic phenomenon exhibited by waves. When two electromagnetic waves interact with their peaks and troughs coinciding, a resulting wave with enhanced amplitude is produced. This is known as constructive interference. In this case, the two waves interacting are in phase with each other.
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IR Frequency Region: Fingerprint Region

IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the C=O, C=N, and C=C occur between 1600–1850 cm−1.
The...
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Phase-lag controllers are widely used in control systems to improve stability and reduce steady-state errors. A dimmer switch controlling the brightness of a light bulb serves as a practical example of phase-lag control, gradually adjusting the bulb's brightness. Mathematically, phase-lag control or low-pass filtering is represented when the factor 'a' is less than 1.
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Updated: Jun 17, 2026

Micro/Nano-scale Strain Distribution Measurement from Sampling Moir&#233; Fringes
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Published on: May 23, 2017

Frequency-domain enhanced spatial multi-position moiré fringe alignment method.

YuHao Jin, YuLiang Long, Wei Liu

    Optics Letters
    |June 15, 2026
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces a novel frequency-domain enhanced spatial multi-position moiré fringe alignment method for semiconductor lithography. The new technique offers precise, fixed-point illumination and wavelength control, achieving sub-nanometer repeatability for critical alignment tasks.

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    A Multimodal Wide-Field Fourier-Transform Raman Microscope
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    A Multimodal Wide-Field Fourier-Transform Raman Microscope

    Published on: December 30, 2025

    Area of Science:

    • Optics and Photonics
    • Semiconductor Manufacturing
    • Metrology

    Background:

    • Existing lithography alignment methods rely on multi-wavelength light and off-axis illumination.
    • Alignment marks in wafer scribe lanes vary with chip layout, challenging conventional fixed-point illumination.
    • Current off-axis illumination lacks coordinated control over wavelength and incident angle for alignment marks.

    Purpose of the Study:

    • To propose a novel frequency-domain enhanced spatial multi-position moiré fringe alignment method.
    • To overcome limitations of conventional methods in fixed-point illumination and coordinated light control.
    • To enhance precision and repeatability in lithography alignment processes.

    Main Methods:

    • Development of a frequency-domain enhanced spatial multi-position moiré fringe alignment technique.
    • Implementation of modulated illumination wavelength and incident angle control.
    • Utilizing a wide field of view (7430 × 8830 μm) and adjustable wavelengths (532–635 nm).

    Main Results:

    • Achieved modulation of illumination wavelength and incident angle at any position within the field of view.
    • Demonstrated measurement repeatability with a 3σ value less than 1 nm at arbitrary detection positions.
    • Enabled precise alignment for variable alignment mark locations.

    Conclusions:

    • The proposed method offers superior flexibility and precision compared to conventional lithography alignment techniques.
    • Sub-nanometer repeatability is achievable across a large field of view and adjustable wavelengths.
    • This advancement is critical for next-generation semiconductor manufacturing requiring high-accuracy alignment.