Investigating the impact of irradiation on various ringFET-based SRAM circuits using 3D TCAD

Area of Science:

• Semiconductor device physics
• Radiation effects in electronics
• Memory circuit design

Background:

• Single-event upsets (SEUs) in SRAM can cause critical system failures.
• Developing SEU-tolerant memory architectures is essential for reliable electronic systems.
• Advanced transistor designs are needed to improve memory robustness.

Purpose of the Study:

• To analyze DC characteristics of junctionless, LDD, and BOX-LDD ringFETs.
• To evaluate the static noise margins (SNMs) of 6T SRAM cells using these ringFETs.
• To assess the radiation tolerance of SRAM cells with different ringFET architectures and drain configurations.

Main Methods:

• 3D Technology Computer Aided Design (TCAD) simulations for DC characterization.
• Evaluation of Read, Write, and Hold SNMs for SRAM cell stability.
• Radiation exposure testing of SRAM cells with inner-drain and outer-drain configurations.

Main Results:

• BOX-LDD ringFETs demonstrate superior DC performance over junctionless and LDD ringFETs.
• Inner-drain SRAM cell architecture shows higher critical dose tolerance than outer-drain.
• BOX-LDD ringFET SRAMs exhibit significantly enhanced radiation robustness compared to other architectures.

Conclusions:

• The BOX-LDD ringFET SRAM with an inner-drain design offers the highest critical dose tolerance.
• This architecture is highly suitable for reliable memory applications in radiation-intensive environments like aerospace.
• The findings pave the way for more robust memory solutions in demanding electronic applications.