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Geometry-Driven Performance Enhancement in h-BN/β-Ga₂O₃ Heterostructures for Solar-Blind and Polarization-Sensitive

Waqas Ahmad¹, Shrouq H Aleithan², Muhammad Ajmal³

¹Laboratory of 2D Optoelectronics and Nanoelectronics (L2DON), State Key Laboratory of Quantum Functional Materials, Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Blvd, Shenzhen 518055, China.

ACS Applied Materials & Interfaces

|June 16, 2026

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Geometry significantly enhances solar-blind ultraviolet photodetectors. Vertical heterostructures using exfoliated gallium oxide (β-Ga₂O₃) and hexagonal boron nitride (h-BN) show superior performance over lateral designs.

Area of Science:

Materials Science
Optoelectronics
Nanotechnology

Background:

Solar-blind ultraviolet photodetectors are crucial for various applications.
Current devices face limitations in carrier collection and fabrication complexity.
Hexagonal boron nitride (h-BN) and beta-gallium oxide (β-Ga₂O₃) are promising materials.

Purpose of the Study:

To investigate geometry-driven performance enhancements in h-BN/β-Ga₂O₃ heterostructures.
To compare the photodetection performance of vertical and lateral heterostructure architectures.
To explore the potential of mechanically exfoliated materials for cost-effective photodetector fabrication.

Main Methods:

Fabrication of h-BN/β-Ga₂O₃ heterostructures using mechanically exfoliated β-Ga₂O₃.

Keywords:

2D materials Heterostructures Photodetection Polarization Solar blind Wide bandgap semiconductor

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Systematic comparison of vertical and lateral heterostructure device geometries.

Characterization of photoresponse, responsivity, external quantum efficiency, and polarization sensitivity.

Main Results:

Exfoliated β-Ga₂O₃ devices showed photoresponse from 200 to 405 nm.
Vertical h-BN/β-Ga₂O₃ photodetectors achieved significantly higher responsivity (96.7 AW^-1) and EQE (52258%) at 230 nm compared to lateral devices.
Anisotropic photoresponse with a dichroic ratio of ~2.1 was observed in the vertical configuration, attributed to a built-in electric field.

Conclusions:

Device geometry is a critical factor in optimizing photodetection performance.
Vertical h-BN/β-Ga₂O₃ heterostructures fabricated via exfoliation offer a high-performance, cost-effective solution for solar-blind UV detection.
The findings demonstrate the potential of geometry engineering for advanced optoelectronic devices.