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Updated: Jun 17, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Optimizing the supercapacitive performance of MoS2 by multivalent tungsten ion doping
Ion Nesterovschi1,2, Ameen Uddin Ammar1, Adriana Popa1
1National Institute for Isotopic and Molecular Technologies, Donat 67-103, Cluj-Napoca, Romania. arpad.rostas@itim-cj.ro.
Abstract:
This study examined the effect of tungsten doping on the structural and electrochemical performance of molybdenum disulfide (MoS2) in symmetric supercapacitor devices. MoS2 nanoflowers with different W contents (0-1%) were synthesized by a hydrothermal method and characterized using XRD, Raman, PL, EPR, SEM, and BET analysis. Tungsten incorporation induced lattice distortions, sulfur vacancies, and enhanced defect-assisted charge transport, while retaining the layered morphology. Electrochemical measurements revealed a combination of electric double-layer and pseudocapacitive behavior with the MoS2:W0.7 electrode material delivering the highest performance. This device achieved a specific capacitance of 848 F g-1 at 10 mV s-1, an energy density of 117.8 Wh kg-1, a power density of 2121 W kg-1, and excellent cycling stability, retaining 97% of its capacitance. The results demonstrate that W doping introduces additional electroactive sites and improves conductivity, highlighting a simple strategy to enhance the energy-storage capability of MoS2-based materials for supercapacitor applications.
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