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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Optimizing the supercapacitive performance of MoS2 by multivalent tungsten ion doping.

Ion Nesterovschi1,2, Ameen Uddin Ammar1, Adriana Popa1

  • 1National Institute for Isotopic and Molecular Technologies, Donat 67-103, Cluj-Napoca, Romania. arpad.rostas@itim-cj.ro.

Nanoscale
|June 16, 2026
PubMed
Summary

Tungsten doping enhances molybdenum disulfide (MoS2) nanoflowers for supercapacitors. This W-doped MoS2 material offers superior capacitance and energy density, demonstrating a promising strategy for advanced energy storage.

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Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System
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Evaluating the Electrochemical Properties of Supercapacitors using the Three-Electrode System

Published on: January 7, 2022

Area of Science:

  • Materials Science
  • Electrochemistry
  • Nanotechnology

Background:

  • Molybdenum disulfide (MoS2) is a promising material for energy storage.
  • Enhancing the electrochemical performance of MoS2 is crucial for supercapacitor applications.

Purpose of the Study:

  • To investigate the impact of tungsten (W) doping on MoS2 structure and supercapacitor performance.
  • To explore W-doped MoS2 nanoflowers as electrode materials for symmetric supercapacitors.

Main Methods:

  • Synthesis of MoS2 nanoflowers with varying W content (0-1%) via hydrothermal method.
  • Characterization using XRD, Raman, PL, EPR, SEM, and BET analysis.
  • Electrochemical performance evaluation in symmetric supercapacitor devices.

Main Results:

  • Tungsten incorporation induced lattice distortions and sulfur vacancies in MoS2.
  • The MoS2:W0.7 electrode exhibited the highest specific capacitance (848 F g-1 at 10 mV s-1).
  • Achieved high energy density (117.8 Wh kg-1) and power density (2121 W kg-1) with 97% capacitance retention.

Conclusions:

  • W doping enhances charge transport and introduces additional electroactive sites in MoS2.
  • W-doped MoS2 demonstrates improved conductivity and energy storage capability.
  • This study presents a simple and effective method to boost MoS2 performance for supercapacitors.