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Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Related Experiment Video

Updated: Jun 17, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

High-performance self-powered photodetectors based on Te/Si heterojunctions.

Quanyu Lu1, Changhui Du1, Yunjie Liu2

  • 1Shandong Key Laboratory of Intelligent Energy Materials, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China. haolanzhong@upc.edu.cn.

Nanoscale
|June 16, 2026
PubMed
Summary

High-performance tellurium/silicon (Te/Si) heterojunction photodetectors were fabricated. These devices overcome limitations of pure tellurium, offering high responsivity and detectivity for self-powered, high-speed applications.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Tellurium (Te) shows promise for self-powered photodetectors due to its electrical properties and stability.
  • Limitations include high dark current and slow response speeds in pure Te devices, hindering practical use.

Purpose of the Study:

  • To develop high-performance Te/Si heterojunction photodetectors.
  • To address the limitations of pure Te photodetectors by introducing a built-in electric field.

Main Methods:

  • Fabrication of Te/Si heterojunctions using sputtering.
  • Deposition of textured Te films onto n-type silicon (n-Si).
  • Characterization of photodetector performance under illumination.

Main Results:

  • Achieved high responsivity (370 mA W⁻¹) and detectivity (2.08 × 10¹² Jones) at 0 V bias.
  • Demonstrated a 3 dB cut-off frequency of ~5 kHz and rapid response times (~135/142 μs).
  • Exhibited excellent repeatability and stability in the Te/Si heterojunction photodetectors.

Conclusions:

  • Te/Si heterojunctions effectively utilize a built-in electric field to enhance photodetector performance.
  • These heterojunctions are suitable for high-performance, self-powered, and high-speed photodetector applications.
  • The developed photodetectors show significant potential for advanced optoelectronic systems.