Related Experiment Video
Updated: Jun 17, 2026
09:41
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
Published on: May 23, 2025
Torque-Driven Grain Rotation in Solder Interconnects under Electromigration for Advanced Packaging: Insights from
Han Jiang1, Yaohua Xu1, Saranarayanan Ramachandran2
1School of Integrated Circuits, Anhui University, Hefei 230601, China.
ACS Applied Materials & Interfaces
|June 16, 2026
Summary
Grain rotation in solder interconnects is driven by electron wind torque, aligning low-resistivity axes with current flow. This texture evolution enhances interconnect conductivity, offering insights into advanced packaging reliability.
Area of Science:
- Materials Science
- Computational Physics
- Microelectronics Engineering
Background:
- Scaling down microelectronic devices necessitates understanding solder interconnect reliability in 3D integrated circuits.
- Grain morphology and crystallographic orientation significantly impact the performance and longevity of advanced packaging.
- Electromigration, anisotropic diffusion, and crystallographic reorientation are critical factors influencing microstructural evolution under high current densities.
Purpose of the Study:
- To develop a computational framework for predicting grain evolution in Sn solder interconnects under electromigration.
- To elucidate the quantitative mechanisms coupling electromigration, anisotropic diffusion, and crystallographic reorientation.
- To investigate the role of electron wind torque and electromigration in grain rotation and texture evolution.
Main Methods:
- Development of a 3D phase-field framework integrating the Kobayashi-Warren-Carter model.
- Inclusion of electromigration-driven atomic transport and electron wind torque.
- Simulation of grain evolution and texture development in Sn solder interconnects.
Main Results:
- Anisotropic electrical conductivity and diffusivity induce selective grain rotation, with misaligned grains rotating up to 15° to align their a-axes with electron flow.
- Electron wind torque governs grain reorientation dynamics, while electromigration drives mass transport.
- Simulated texture evolution shows qualitative agreement with experimental observations, featuring elimination of low-angle grains and emergence of preferred orientations.
- Microstructure-driven current redistribution increases interconnect conductivity, stabilizing the evolved texture.
Conclusions:
- The developed framework provides a physically grounded approach to study electromigration-induced grain evolution.
- Electron wind torque is the primary driver of grain reorientation, while electromigration governs mass transport.
- Grain structure control offers a potential strategy for mitigating electromigration-induced failures in next-generation heterogeneous integration.
More Related Videos
08:46Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages
Published on: April 13, 2016
09:00Visualization of Failure and the Associated Grain-Scale Mechanical Behavior of Granular Soils under Shear using Synchrotron X-Ray Micro-Tomography
Published on: September 29, 2019
Related Concept Videos
01:13Torque On A Current Loop In A Magnetic Field
The most common application of magnetic force on current-carrying wires is in electric motors. These consist of loops of wire, which are placed between the magnets with a magnetic field. When current flows through the loops, the magnetic field applies torque, which causes the shaft to rotate, thus converting electrical energy to mechanical energy.
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
Consider a rectangular current-carrying loop containing N turns of wire, placed in a uniform magnetic field. The net force on a current-carrying loop...
01:27Electrostatic Boundary Conditions in Dielectrics
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
01:19Electro-mechanical Systems
Electromechanical systems are intricate configurations that effectively combine electrical and mechanical elements to achieve a desired outcome. Central to many of these systems is the DC motor, a device that converts electrical energy into mechanical motion, enabling various applications ranging from simple fans to complex robotic mechanisms.
A key component of the DC motor is the armature, a rotating circuit positioned within a magnetic field. As an electric current passes through the...
A key component of the DC motor is the armature, a rotating circuit positioned within a magnetic field. As an electric current passes through the...
01:27Induced Electric Fields: Applications
An important distinction exists between the electric field induced by a changing magnetic field and the electrostatic field produced by a fixed charge distribution. Specifically, the induced electric field is nonconservative because it does not work in moving a charge over a closed path. In contrast, the electrostatic field is conservative and does no net work over a closed path. Hence, electric potential can be associated with the electrostatic field but not the induced field. The following...
01:24Metal-Semiconductor Junctions
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
01:27Biasing of Metal-Semiconductor Junctions
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...