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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Voltage-Programmable Switching in Halide Perovskite Memristors by Asymmetric Contact Engineering.
Yanwei Fan1, Haichuan Ni1, Jintian Pan1
1Fujian Provincial Key Laboratory of Flexible Electronics, Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University and Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
Small (Weinheim an Der Bergstrasse, Germany)
|June 16, 2026
Summary
This study introduces a novel asymmetric layer in perovskite memristors, enabling single devices to perform both nonvolatile resistive switching and volatile threshold switching based on bias polarity. This breakthrough enhances multi-role reuse and simplifies neuromorphic systems.
Area of Science:
- Materials Science
- Electronics
- Nanotechnology
Background:
- Metal halide perovskites offer mixed ionic-electronic conduction and low-temperature processing.
- Current perovskite memristors typically exhibit either nonvolatile bipolar resistive switching (RS) or volatile threshold switching (TS), limiting device functionality.
- This single-mode operation necessitates peripheral overhead and restricts in-device multi-role reuse.
Purpose of the Study:
- To develop a single perovskite memristor capable of operating in multiple modes (RS and TS).
- To enable bias polarity to act as a selector for switching modes within the same device.
- To enhance the performance and stability of perovskite memristors for advanced computing applications.
Main Methods:
- Incorporation of a single asymmetric transport layer at one contact of the perovskite memristor.
- Utilizing Mott-Schottky analysis to investigate the built-in voltage and its effect on halide-vacancy filaments.
- Testing device performance across different materials including C$_{60}$, NiO$_{x}$, and Spiro-OMeTAD.
Main Results:
- The asymmetric layer enables nonvolatile RS under positive bias sweeps and volatile TS with self-reset under negative sweeps in the same device.
- C$_{60}$-based devices demonstrated improved retention (∼2.0 × 10$^{4}$ s), endurance (∼6 × 10$^{3}$ cycles), and storage stability (∼1300 h) compared to symmetric controls.
- Mott-Schottky analysis confirmed a finite built-in voltage that dynamically stabilizes or dissolves halide-vacancy filaments, explaining the observed reconfigurability.
Conclusions:
- A minimal asymmetry in perovskite memristors allows for polarity-controlled multi-mode operation, streamlining compute-in-memory and neuromorphic systems.
- The device achieves an intrinsic stability-plasticity balance, with negative pulses for short-term updates and positive pulses for long-term memory consolidation.
- This approach is process-compatible and offers significant improvements in device performance and stability.
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