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Updated: Jun 18, 2026

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Role of Si/dielectric interface traps on the reliability of tree-shaped complementary FETs for sub-3 nm technology
S Shreyas Thanthri1, Sresta Valasa2, Venkata Ramakrishna Kotha3
1Manipal Institute of Technology Bengaluru, Manipal Academy of Higher Education, Manipal, India.
Abstract:
Complementary (C) FETs enable superior scaling and electrostatics for sub-3 nm nodes but the increased Si/dielectric interface reliability a critical concern, and its impact on Tree-shaped CFETs is investigated for the first time in this work. The Si/dielectric interface trap density (Nit) is varied from 1 to 9 × 1012 cm- 2 for both acceptor and donor traps to evaluate their influence on digital, analog, RF, and circuit characteristics. With increasing Nit, in the n-type (p-type) device, acceptor (donor) traps repel electrons (holes), reducing ION while suppressing IOFF by ~ 5 orders, improving the ION/IOFF ratio. In p-type (n-type) device acceptor (donor) traps attract holes (electrons), increasing ION by ~ 68% (~ 58%) but reducing the ratio to 102 due to higher leakages. Notably, when the Nit exceeds 4 × 1012 cm- 2, the switching ratio deteriorates below 104 for donor (acceptor) traps in the n-type (p-type) device due to pronounced trap-assisted leakage. The findings demonstrate that the Tree-shaped CFET maintains strong electrostatic integrity till ≤ 4 × 1012 cm- 2 and stable analog/RF behavior even under severe Si/dielectric interface trap perturbations. The Tree-CFET CMOS inverter shows robust circuit behavior with ~ 2.9 ps delay at moderate trap densities, highlighting the need for precise interface engineering for sub-3 nm nodes.
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