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Related Concept Videos

Determination of Crystal Structures01:29

Determination of Crystal Structures

In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...
Imperfections in Crystal Structure: Point, Line and Plane Defects01:25

Imperfections in Crystal Structure: Point, Line and Plane Defects

A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
X-ray Crystallography02:18

X-ray Crystallography

The size of the unit cell and the arrangement of atoms in a crystal may be determined from measurements of the diffraction of X-rays by the crystal, termed X-ray crystallography.
Diffraction
Diffraction is the change in the direction of travel experienced by an electromagnetic wave when it encounters a physical barrier whose dimensions are comparable to those of the wavelength of the light. X-rays are electromagnetic radiation with wavelengths about as long as the distance between neighboring...
Electron Microscope Tomography and Single-particle Reconstruction01:07

Electron Microscope Tomography and Single-particle Reconstruction

Transmission electron microscopy (TEM) can be used to determine the 3D structure of biological samples with the help of techniques such as electron microscope tomography and single-particle reconstruction. While single-particle reconstruction can examine macromolecules and macromolecular complexes in vitro conditions only, tomography permits the study of cell components or small cells in vivo.
Electron Tomography
Electron tomography can be performed either in TEM or STEM (scanning transmission...

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Updated: Jun 19, 2026

Picometer-Precision Atomic Position Tracking through Electron Microscopy
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Picometer-Precision Atomic Position Tracking through Electron Microscopy

Published on: July 3, 2021

Resolving intrinsic dislocation structure in perovskite crystals using pulsed electron beam with atomic resolution.

Xiaocui Li1,2,3, Shihua Ma4,5, Wanpeng Li6

  • 1Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, China.

Nature Communications
|June 17, 2026
PubMed
Summary

Researchers resolved atomic-level dislocation structures in perovskites using pulsed electron beams. This technique reveals intrinsic glide-dissociated dislocations, crucial for understanding material plasticity and enabling advanced semiconductor defect engineering.

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Plasticity is essential for semiconductor and ceramic processing, impacting flexible electronics.
  • Perovskites and SrTiO3 show room-temperature plasticity via specific dislocations, but their atomic structures are unclear.
  • Existing scanning transmission electron microscopy (STEM) observations conflict with theoretical models of dislocation mobility.

Purpose of the Study:

  • To resolve the intrinsic atomic structures of dislocations in perovskites.
  • To understand the mechanisms behind perovskite plasticity and deformation.
  • To develop advanced imaging techniques for beam-sensitive materials.

Main Methods:

  • Utilized an electrostatic dose modulator (EDM) with pulsed electron beams for sub-angstrom resolution imaging.
  • Employed pulsed electron beams to minimize cumulative radiation damage and allow defect recombination.
  • Compared results from pulsed beams with continuous beams to observe glide-to-climb transitions.

Main Results:

  • Successfully resolved intrinsic, glide-dissociated dislocations in perovskites at the atomic level.
  • Demonstrated that pulsed beams prevent sustained high defect concentrations, preserving intrinsic structures.
  • Observed glide-to-climb transitions under continuous beams, with structures varying based on dislocation core chemistry (anion vs. cation terminated).

Conclusions:

  • Elucidated intrinsic dislocation structures and deformation mechanisms in perovskites.
  • Provided insights applicable to other semiconductors and ceramics exhibiting climb-dissociation.
  • Established a non-destructive, atomic-scale imaging technique for beam-sensitive materials and defect engineering.