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Edge-Bound Doping Effect in Oxidation-Etched CVD MoS2
Ying Zhang1, Zhipeng Xin1, Tianxiang Zhao2
1Department of Applied Physics, College of Physics and Materials Science, Tianjin Normal University, Tianjin, P. R. China.
Small (Weinheim an Der Bergstrasse, Germany)
|June 19, 2026
Summary
Oxidative doping of molybdenum disulfide (MoS2) primarily occurs at etched edge sites, not the basal plane. This edge-bound doping precisely tunes the electrical properties of MoS2 field-effect transistors (FETs).
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- The conventional understanding of oxidative doping in molybdenum disulfide (MoS2) suggests oxygen incorporation mainly occurs on its basal plane.
- This limits precise control over the electronic properties of MoS2-based devices.
Purpose of the Study:
- To investigate an alternative doping mechanism in MoS2 beyond basal plane incorporation.
- To demonstrate a method for spatially controlled doping and electronic tuning in MoS2.
Main Methods:
- Oxidation etching (OE) of chemical vapor deposited (CVD) MoS2.
- Integrated theoretical and experimental analyses.
- Fabrication and characterization of MoS2 field-effect transistors (FETs).
Main Results:
- A dominant edge-bound doping effect was observed, with oxygen and oxides preferentially incorporated at etched edge sites.
- This 1D edge doping induces localized electron depletion through oxygen passivation and oxide-induced hole injection.
- Tuning OE time allowed for deterministic adjustment of electron depletion and electrical properties, including n-type threshold shifts and p-type transitions.
Conclusions:
- Oxidation etching of MoS2 leads to preferential edge doping, challenging the conventional basal plane model.
- This edge-bound doping strategy enables precise spatial control and electronic tuning of 2D transition metal dichalcogenides (2D TMDs).
- The findings advance the development of functional 2D TMD devices with tailored electronic characteristics.
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