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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Updated: Jun 20, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

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Published on: May 13, 2020

Edge-Bound Doping Effect in Oxidation-Etched CVD MoS2.

Ying Zhang1, Zhipeng Xin1, Tianxiang Zhao2

  • 1Department of Applied Physics, College of Physics and Materials Science, Tianjin Normal University, Tianjin, P. R. China.

Small (Weinheim an Der Bergstrasse, Germany)
|June 19, 2026
PubMed
Summary
This summary is machine-generated.

Oxidative doping of molybdenum disulfide (MoS2) primarily occurs at etched edge sites, not the basal plane. This edge-bound doping precisely tunes the electrical properties of MoS2 field-effect transistors (FETs).

Keywords:
p‐type conductionchemical vapor depositionedge‐bound dopingmolybdenum disulfideoxidation etching

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Fabrication of Spatially Confined Complex Oxides
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Fabrication of Spatially Confined Complex Oxides
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Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • The conventional understanding of oxidative doping in molybdenum disulfide (MoS2) suggests oxygen incorporation mainly occurs on its basal plane.
  • This limits precise control over the electronic properties of MoS2-based devices.

Purpose of the Study:

  • To investigate an alternative doping mechanism in MoS2 beyond basal plane incorporation.
  • To demonstrate a method for spatially controlled doping and electronic tuning in MoS2.

Main Methods:

  • Oxidation etching (OE) of chemical vapor deposited (CVD) MoS2.
  • Integrated theoretical and experimental analyses.
  • Fabrication and characterization of MoS2 field-effect transistors (FETs).

Main Results:

  • A dominant edge-bound doping effect was observed, with oxygen and oxides preferentially incorporated at etched edge sites.
  • This 1D edge doping induces localized electron depletion through oxygen passivation and oxide-induced hole injection.
  • Tuning OE time allowed for deterministic adjustment of electron depletion and electrical properties, including n-type threshold shifts and p-type transitions.

Conclusions:

  • Oxidation etching of MoS2 leads to preferential edge doping, challenging the conventional basal plane model.
  • This edge-bound doping strategy enables precise spatial control and electronic tuning of 2D transition metal dichalcogenides (2D TMDs).
  • The findings advance the development of functional 2D TMD devices with tailored electronic characteristics.