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Twist-controlled modulation of quantum emitters in hexagonal boron nitride
Angus Gale1, Seungjun Lee2,3, Seungmin Park4
1School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia.
Science Advances
|June 19, 2026
Summary
Twisting two-dimensional materials like hexagonal boron nitride (hBN) allows precise control over quantum emitters. This mechanical tuning enables significant shifts in light emission, paving the way for programmable quantum circuits.
Area of Science:
- Condensed matter physics
- Nanophotonics
- Quantum optics
Background:
- Stacking and twisting 2D materials creates interlayer coupling, leading to novel photophysical phenomena.
- Quantum emitters in 2D materials are sensitive to their local environment.
Purpose of the Study:
- To investigate the effect of twist angle in van der Waals (vdW) stacked hexagonal boron nitride (hBN) on quantum emitters.
- To demonstrate experimental control over quantum emitter properties via mechanical twisting.
Main Methods:
- Utilized van der Waals (vdW) stacking of hexagonal boron nitride (hBN) layers.
- Employed density functional theory (DFT) to model quantum emitter properties.
- Performed experimental in situ mechanical twisting of hBN layers.
Main Results:
- The twist angle significantly influences the emission properties of embedded quantum emitters.
- Achieved in situ tuning of quantum emitters by mechanically twisting the hBN layer.
- Demonstrated over 30 nanometers (~100 meV) of emission tunability.
Conclusions:
- Mechanical twisting of vdW materials provides a method to modulate quantum emitters.
- This technique is a significant step towards developing programmable on-chip quantum circuitry.
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