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Steric Effect-Controlled Atomic Passivation of Colloidal InAs Quantum Dots for Infrared Photodetectors
In-Suh Lee1, Gaeun Cho1, Yongnam Ahn1
1Department of Chemical and Biological Engineering, Korea University, Seoul, Republic of Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|June 23, 2026
Summary
Smaller halide ligands improve surface passivation in lead-free indium arsenide (InAs) colloidal quantum dots (CQDs). This leads to enhanced charge transport and better performance in infrared optoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Quantum Dot Technology
Background:
- Infrared colloidal quantum dots (CQDs) are crucial for next-generation optoelectronics.
- III-V group CQDs offer lead-free alternatives, but surface passivation is a major hurdle.
- Efficient passivation is essential for high-performance lead-free CQD infrared optoelectronics.
Purpose of the Study:
- To explore atomic ligand passivation for indium arsenide (InAs) CQDs.
- To develop a sequential ligand adsorption model using density functional theory and experiments.
- To understand the factors governing surface passivation and their impact on optoelectronic properties.
Main Methods:
- Utilized density functional theory for modeling ligand adsorption dynamics.
- Integrated theoretical modeling with systematic experimental investigations.
- Focused on atomic-level ligand passivation strategies for InAs CQDs.
Main Results:
- Ligand adsorption is governed by ion-size-dependent steric hindrance and electrostatic interactions of halide ligands.
- Smaller halide ligands result in more effective surface passivation and balanced stoichiometry.
- Optimized InAs CQDs achieved a specific detectivity of 3.2 × 10^12 Jones at 980 nm.
Conclusions:
- Smaller halide ligands are key to achieving efficient surface passivation in InAs CQDs.
- Improved passivation directly enhances charge transport properties.
- This work paves the way for high-performance, lead-free infrared optoelectronic devices.
