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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Polarization-Field-Driven Asymmetric Magnetoelectric Coupling in Janus MoSeS-Based van der Waals Heterostructures.
Mengyu Liu1, Zilong Chen1, Hao Wang1
1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices of Ministry of Education, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China.
ACS Nano
|June 25, 2026
Summary
Researchers modulated magnetoelectric coupling in van der Waals heterostructures using built-in polarization electric fields. This tuning impacts spin-valley properties and charge transport, offering new avenues for spintronic and valleytronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Engineering
Background:
- Interfacial magnetoelectric coupling is key for advanced spintronic devices.
- Tuning heterostructure properties requires precise control over interfacial interactions.
Purpose of the Study:
- To investigate modulating magnetoelectric coupling in van der Waals semiconductor/ferromagnetic heterostructures.
- To explore the mechanism of polarization-electric-dependent modulation of spin-valley properties.
Main Methods:
- Fabrication of Janus MoSeS/CrBr3 and MoSSe/CrBr3 heterostructures with opposite polarization directions.
- Spectroscopic measurements and theoretical calculations to analyze electronic structure and charge transport.
- Investigation of polarization field effects on interfacial orbital hybridization and interlayer coupling.
Main Results:
- Polarization fields tune electronic structure and interlayer charge transport, altering magnetoelectric coupling and spin-valley properties.
- MoSeS/CrBr3 heterostructures exhibit enhanced orbital hybridization, ultrafast spin-charge tunneling, and boosted valley polarization.
- MoSSe/CrBr3 heterostructures show strengthened interlayer magnetoelectric coupling, significant conduction band valley splitting, but slower charge transfer and lower valley polarization.
Conclusions:
- Built-in polarization electric fields offer a direct strategy to modulate magnetoelectric coupling in van der Waals heterostructures.
- The study provides insights into polarization-field effects on spin-valley dynamics, crucial for designing next-generation valleytronic devices.
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